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Samsung D1z, so are its NAND Flash and DRAM with EUV

Oddly enough, both Samsung and Micron currently have smartphones as their main market, much more so in the case of the former, since they also manufacture their own high-performance SoCs. Getting the most DRAMs with EUV is a serious blow to fall for the loser, as there are a number of clear improvements that could tip the balance towards the winner in terms of technology.

Samsung begins its journey in EUV with D1z as DRAM LPDDR5

It will not, for the moment, reach PCs due to its higher speed, consumption and more contained latencies, without forgetting the necessary volume, but, above all, because DDR5 is still far from being the official replacement for DDR4 that has given us such good times dice. So the LPDDR5 was ready for deployment thanks to the new DRAM drivers for ARMs and their SoCs, so said and done.


Currently, we find two different chips manufactured by the Korean company: 12GB LPDDR5 D1z and 16GB D1z, which have already been seen in the new Samsung Galaxy S21 5G; S21 5G, S21 + 5G and S21 Ultra 5G. The first thing we should know about these new D1z chips is that Samsung earns more with them thanks to the fact that they have managed to increase manufacturing capacity by 15% compared to their predecessors, as a result of the new scanners, but what is achieved apart from this?

Smaller size, higher density, but capacity limits application


The application of EUV technology has been noted in various terms within DRAMs. In the first place, the size of the Die to the same lithographic process has been reduced from 53.53 mm2 to 43.98 mm2, or what is the same, 18% of space has been saved in each wafer, allowing the manufacture of greater number of chips and in greater proportion.

In addition, the density has increased considerably without having to change the node per se (there is a downstream of the scanner itself), a magnificent announcement that allows to go from 0.224 Gb / mm2 to 0.273 Gb / mm2. Logically if we have a smaller die and a higher density it is because the size of the cell has to be reduced, as it is, since it goes from 0.00231 square picometers to 0.00197, modifying its D / R of 17 , 1 nm to 15.7 nm.

To achieve this, Samsung had to work hard, adding just an EUV mask to the process, which greatly improved the design of the cells, as well as their sharpness for the scanner laser, making BLP patterns much more perfect.

The million dollar question would be, when is Samsung going to roll out its new EUV chips for the PC and server market? It will really depend on Intel and AMD in the first place. The company has overtaken Micron and is once again positioned as the DRAM market leader, so we may see a final push from DDR4 and especially GDDR6X on GPUs with this engraving technique before DDR5, which should be a reality as early as 2022 on PC.